mpw-005 — SKY130 MPW-5 reticle 5CS8011AC

Foundry product

EF MPW#5 (+ 'With ReRAM' split lot)

Reticle set

5CS8011AC

Run date

2022-03-21

Submissions closed

2022-03-21

Projects

74

Fab lot

4229389

Identification

confirmed — Lot records: EF MPW#5, lot 4229389 = 'SKY130 MPW 5'

Shuttle page

archived copy of https://platform.efabless.com/shuttles/MPW-5 — the platform that hosted it is gone

Foundry data

third_party/shuttle/sky130/mpw-005/foundry

42 mask layers rendered

In process order — the order the wafer meets them, by the step number in the second column; the 6 layers with no step number are listed last. Each thumbnail is the whole reticle: all 40 dies stitched at their manifest frame positions.

	Mask	Process step	Layers	Dies with shapes	Shapes
	FOM Field Oxide FOM = diff OR tap (OR grown pnp emitter)	4 Field oxide mask	drawn 65:20, 65:44 fill 23:28 on mask GDS 23:0	40 of 40	82,403,356
	DNM Deep N-Well DNM = dnwell sized by cdnm.3	7 Deep N-well mask	drawn 64:18 on mask GDS 48:0	40 of 40	20,309
	LVTNM Low Vt Nch* drawn lvtn plus a created part [nwell AND (hvtp OR areaid.ce)] OR (LV nwell over varactors); only the drawn part is rendered	14 Low Vt NOMOS mask	drawn 125:44 on mask GDS 25:0 derived 125:44 OR (64:20 AND (78:44 OR 81:2))	40 of 40	132,148
	NWM N-Well* NWM = nwell sized (cnwm.3a outside hvi / 3b inside), with DEPMOS/pwell-resistor exemptions	17 N-well mask	drawn 64:20 on mask GDS 21:0	40 of 40	26,260,556
	HVTPM High Vt PCh* created over (LV nwell = nwell NOT hvi) NOT lvtn, plus hvtp only where nwell overlaps a varactor; the fab algorithm says do NOT OR hvtp in. Rendered as nwell = a superset	22 High V P-channel implant mask	drawn 64:20 on mask GDS 97:0 derived (64:20 NOT 75:20) NOT 125:44	40 of 40	104,428
	PWBM P-Well Block Mask not used in SKY130	26 P-well block mask	drawn 19:44	0 of 40 unused on this shuttle	0
	PWDEM P-Well Drain Extended pwde drawing not used in SKY130	30 P-well drain extended mask	drawn 124:20	0 of 40 unused on this shuttle	0
	TUNM Tunnel Mask TUNM = tunm sized by ctunm.3	35 Tunnel mask	drawn 80:20 on mask GDS 20:0	1 of 40	16
	ONOM ONO Mask ONOM = tunm sized by clonom.3 (conom 87:44 is the fab's precomputed layer, not drawn)	41 ONO mask	drawn 80:20 on mask GDS 88:0	1 of 40	16
	LVOM Low Voltage Oxide LVOM = hvi OR tunm and the SKY130 layer sheet	44 Low voltage oxide mask	drawn 75:20, 80:20 on mask GDS 46:0	40 of 40	1,996,759
	RPM Resistor Protect	49 Resistor protect mask	drawn 86:20 on mask GDS 96:0	4 of 40	179
	URPM Ultra-high resistor poly mask	55 Ultra-high resistor poly mask	drawn 79:20	40 of 40	119
	P1M Poly 1	61 Poly mask	drawn 66:20 fill 28:28 on mask GDS 28:0	40 of 40	213,238,980
	NTM N-tip Implant created over nwell, ldntm and hvi (outside areaid.ce; rpm too in some flows) (cntm 26:20 is the fab's precomputed layer, not drawn)	64 NTM mask(tip fomation)	drawn 64:20, 75:20, 11:44 on mask GDS 27:0 derived 64:20 OR 11:44 OR (75:20 NOT 81:2)	40 of 40	110,972
	HVNTM High Volt. N-tip drawn hvntm merged with a created part (ndiff AND hvi, outside areaid.ce); only the drawn part is rendered	68 HV N-tip mask formation	drawn 125:20 on mask GDS 39:0 derived 125:20 OR ((65:20 AND 93:44 AND 75:20) NOT 81:2)	40 of 40	549,793
	LDNTM Lightly Doped N-tip	71 LD tip layer mask	drawn 11:44 on mask GDS 11:0	1 of 40	42
	NPCM Nitride Poly Cut	78 Nitride poly cut mask	drawn 95:20 on mask GDS 49:0	40 of 40	20,166,002
	PSDM P+ Implant PSDM = psdm OR grown psdm over pnp emitters	81 P+ source drain implant mask	drawn 94:20 on mask GDS 32:0	40 of 40	31,537,227
	PSDI PSDI second P+ implant, same drawn layer as PSDM	82 PSDI	drawn 94:20	40 of 40	31,537,227
	NSDM N+ Implant	85 N+ source drain implant mask	drawn 93:44 on mask GDS 30:0	40 of 40	36,320,822
	LICM1 Local Intr Cont.1 LICM1 = licon1 sized (clicm1.3a/3b by spacing) Via 0 (???→M0)	93 Local interconnect contact mask	drawn 66:44 on mask GDS 43:0	40 of 40	397,442,461
	LI1M Local Intrcnct 1 LI (Metal 0)	102 Local interconnect 1 mask	drawn 67:20 fill 56:28 on mask GDS 56:0	40 of 40	203,765,710
	CTM1 Contact CTM1 = mcon (li1->met1) Via 1 (LI/M0→M1)	107 Metal contact mask	drawn 67:44 on mask GDS 35:0	40 of 40	361,238,161
	MM1 Metal 1 Metal 1	113 Metal1 mask	drawn 68:20 fill 36:28 on mask GDS 36:0	40 of 40	667,890,484
	VIM Via in the sky130B RRAM tier this is cviam, the lower half of the split via1; the upper half is VIMC (r1v) Via 1 (M1→M2)	118 Via1 mask	drawn 68:44 on mask GDS 40:0	40 of 40	67,190,811
	MM2 Metal 2 Metal 2	124 Metal mask2	drawn 69:20 fill 41:28 on mask GDS 41:0	40 of 40	523,692,389
	VIM2 Via 2-PLM Via 2 (M2→M3) variants: Via 2-TNV, Via 2-S8TM, Via 2-PLM	129 Via2 mask	drawn 69:44 on mask GDS 44:0	40 of 40	33,560,413
	CAPM Capacitor MiM not used in SKY130	137 Capacitor mask	drawn 89:44	40 of 40	5,384
	MM3 Metal 3-PLM Metal 3 variants: Metal 3-TLM, Metal 3-S8TM, Metal 3-PLM	139 Metal3 mask	drawn 70:20 fill 34:28 on mask GDS 34:0	40 of 40	198,625,512
	VIM3 Via3-PLM Via 3 (M3→M4)	144 Via3 mask	drawn 70:44 on mask GDS 50:0	40 of 40	34,408,584
	CAP2M Capacitor mask	152 Capacitor mask	drawn 97:44	40 of 40	1,751
	MM4 Metal 4 Metal 4	154 Metal mask4	drawn 71:20 fill 51:28 on mask GDS 51:0	40 of 40	201,505,342
	VIM4 Via4 Via 4 (M4→M5)	159 Via pad mask	drawn 71:44 on mask GDS 58:0	40 of 40	9,759,787
	MM5 Metal 5 Metal 5	162 Metal5 mask	drawn 72:20 fill 59:28 on mask GDS 59:0	40 of 40	9,910,291
	NSM Nitride Seal Mask	165 Nitride seal mask	drawn 61:20 on mask GDS 22:0	40 of 40	1,440
	PDM Pad (scribe protect) PDM = pad OR (cpmm AND areaid.mt) sized by cpdm.4 variants: Pad (scribe protect), Pad (scribe unprotect)	168 Pad mask	drawn 76:20 on mask GDS 37:0	40 of 40	5,547
	HVTRM HLow VT PCh Radio* HVTRM = hvtr	—	drawn 18:20 on mask GDS 98:0	0 of 40 unused on this shuttle	0
	INDM Inductor-TLM INDM = met3 (thick-last-metal flow, not SKY130) not used in SKY130	—	drawn 70:20	40 of 40	11,495,776
	NCM N-Core Implant drawn ncm in the core plus a created periphery part like HVTPM; only the drawn part is rendered not used in SKY130	—	drawn 92:44 on mask GDS 17:0 derived 92:44 OR ((64:20 NOT 75:20) NOT 125:44)	40 of 40	104,428
	RRM RRAM mask the RRAM-stack mask (r1c) of the sky130B RRAM tier between met1 and met2. One drawn layer r1c = GDS 201/20 (open_pdks names it RERAM, short alias 'rr' -> 'rr' + M) defines all three physical films: rr1_bot_electrode, rr1_oxide, rr1_top_electrode. Only on the later sets 5CS8016AC/17AC/18AC. sky130A designs draw no 201/20, so those slots render empty sky130B RRAM tier (met1-met2); drawn layer r1c = GDS 201/20 not used in SKY130	—	drawn 201:20	0 of 40 unused on this shuttle	0
	VIMC Via 1 top, RRAM tier the second via1 mask of the sky130B RRAM tier (r1v). The RRAM splits via1 in two: the designer draws one 'via' shape, and mask generation separates it into via_bot (cviam = VIM) and via_top (r1v) wherever the via is enclosed by r1c. Rendered as via AND r1c. NOT CTM1/mcon, as once assumed: 8016/17/18 each carry a separate CTM1 plate (400), and 455 sits above MM1 (450) while mcon is below met1 sky130B RRAM tier; r1v, the upper half of the split via1 not used in SKY130	—	drawn 68:44 derived 68:44 AND 201:20	0 of 40 unused on this shuttle	0
	VIPDM Pad Via VIPDM = via3 (pad-via flow, not SKY130) not used in SKY130	—	drawn 70:44	40 of 40	34,408,584

These are renders of the drawn shapes that go on each photomask, taken from the layouts the shuttle's projects taped out — they are not photomask artwork: reticle pitch, the 4x reduction, mirroring and the frame features the fab adds are not modelled. An empty image is a real result; several mask layers are used by no project on a given shuttle. Each die's source layout is named in result.json and lives in the public shuttle repositories under foss-eda-tools.googlesource.com, so every image here can be traced back to the tape-out it came from. Generated with sky130-mask-decoder.