mpw-008 — SKY130 MPW-8 reticle 5CS8017AC

Reticle set
5CS8017AC
Run date
2022-11-19
Submissions closed
2022-12-31
Projects
144
Identification
inferred — Sequence after 8016=MPW-7 (8018 is the re-made MPW-4 set); packing list 2026-08-25
Shuttle page
archived copy of https://platform.efabless.com/shuttles/MPW-8 — the platform that hosted it is gone
Foundry data
third_party/shuttle/sky130/mpw-008/foundry

42 mask layers rendered

In process order — the order the wafer meets them, by the step number in the second column; the 6 layers with no step number are listed last. Each thumbnail is the whole reticle: all 40 dies stitched at their manifest frame positions.

MaskProcess stepLayers Dies with shapesShapes
FOM FOM
Field Oxide
FOM = diff OR tap (OR grown pnp emitter)
4
Field oxide mask
drawn 65:20, 65:44
fill 23:28
on mask GDS 23:0
40 of 40 91,778,191
DNM DNM
Deep N-Well
DNM = dnwell sized by cdnm.3
7
Deep N-well mask
drawn 64:18
on mask GDS 48:0
40 of 40 20,792
LVTNM LVTNM
Low Vt Nch*
drawn lvtn plus a created part [nwell AND (hvtp OR areaid.ce)] OR (LV nwell over varactors); only the drawn part is rendered
14
Low Vt NOMOS mask
drawn 125:44
on mask GDS 25:0
derived 125:44 OR (64:20 AND (78:44 OR 81:2))
40 of 40 163,538
NWM NWM
N-Well*
NWM = nwell sized (cnwm.3a outside hvi / 3b inside), with DEPMOS/pwell-resistor exemptions
17
N-well mask
drawn 64:20
on mask GDS 21:0
40 of 40 31,545,799
HVTPM HVTPM
High Vt PCh*
created over (LV nwell = nwell NOT hvi) NOT lvtn, plus hvtp only where nwell overlaps a varactor; the fab algorithm says do NOT OR hvtp in. Rendered as nwell = a superset
22
High V P-channel implant mask
drawn 64:20
on mask GDS 97:0
derived (64:20 NOT 75:20) NOT 125:44
40 of 40 122,768
PWBM PWBM
P-Well Block Mask
not used in SKY130
26
P-well block mask
drawn 19:44 0 of 40
unused on this shuttle
0
PWDEM PWDEM
P-Well Drain Extended
pwde drawing
not used in SKY130
30
P-well drain extended mask
drawn 124:20 0 of 40
unused on this shuttle
0
TUNM TUNM
Tunnel Mask
TUNM = tunm sized by ctunm.3
35
Tunnel mask
drawn 80:20
on mask GDS 20:0
0 of 40
unused on this shuttle
0
ONOM ONOM
ONO Mask
ONOM = tunm sized by clonom.3 (conom 87:44 is the fab's precomputed layer, not drawn)
41
ONO mask
drawn 80:20
on mask GDS 88:0
0 of 40
unused on this shuttle
0
LVOM LVOM
Low Voltage Oxide
LVOM = hvi OR tunm and the SKY130 layer sheet
44
Low voltage oxide mask
drawn 75:20, 80:20
on mask GDS 46:0
40 of 40 2,256,706
RPM RPM
Resistor Protect
49
Resistor protect mask
drawn 86:20
on mask GDS 96:0
2 of 40 535
URPM URPM
Ultra-high resistor poly mask
55
Ultra-high resistor poly mask
drawn 79:20 40 of 40 967
P1M P1M
Poly 1
61
Poly mask
drawn 66:20
fill 28:28
on mask GDS 28:0
40 of 40 222,110,983
NTM NTM
N-tip Implant
created over nwell, ldntm and hvi (outside areaid.ce; rpm too in some flows) (cntm 26:20 is the fab's precomputed layer, not drawn)
64
NTM mask(tip fomation)
drawn 64:20, 75:20, 11:44
on mask GDS 27:0
derived 64:20 OR 11:44 OR (75:20 NOT 81:2)
40 of 40 129,184
HVNTM HVNTM
High Volt. N-tip
drawn hvntm merged with a created part (ndiff AND hvi, outside areaid.ce); only the drawn part is rendered
68
HV N-tip mask formation
drawn 125:20
on mask GDS 39:0
derived 125:20 OR ((65:20 AND 93:44 AND 75:20) NOT 81:2)
40 of 40 593,516
LDNTM LDNTM
Lightly Doped N-tip
71
LD tip layer mask
drawn 11:44
on mask GDS 11:0
0 of 40
unused on this shuttle
0
NPCM NPCM
Nitride Poly Cut
78
Nitride poly cut mask
drawn 95:20
on mask GDS 49:0
40 of 40 30,731,266
PSDM PSDM
P+ Implant
PSDM = psdm OR grown psdm over pnp emitters
81
P+ source drain implant mask
drawn 94:20
on mask GDS 32:0
40 of 40 37,027,168
PSDI PSDI
PSDI
second P+ implant, same drawn layer as PSDM
82
PSDI
drawn 94:20 40 of 40 37,027,168
NSDM NSDM
N+ Implant
85
N+ source drain implant mask
drawn 93:44
on mask GDS 30:0
40 of 40 47,492,651
LICM1 LICM1
Local Intr Cont.1
LICM1 = licon1 sized (clicm1.3a/3b by spacing)
Via 0 (???→M0)
93
Local interconnect contact mask
drawn 66:44
on mask GDS 43:0
40 of 40 446,201,325
LI1M LI1M
Local Intrcnct 1
LI (Metal 0)
102
Local interconnect 1 mask
drawn 67:20
fill 56:28
on mask GDS 56:0
40 of 40 269,025,763
CTM1 CTM1
Contact
CTM1 = mcon (li1->met1)
Via 1 (LI/M0→M1)
107
Metal contact mask
drawn 67:44
on mask GDS 35:0
40 of 40 449,550,329
MM1 MM1
Metal 1
Metal 1
113
Metal1 mask
drawn 68:20
fill 36:28
on mask GDS 36:0
40 of 40 697,813,194
VIM VIM
Via
in the sky130B RRAM tier this is cviam, the lower half of the split via1; the upper half is VIMC (r1v)
Via 1 (M1→M2)
118
Via1 mask
drawn 68:44
on mask GDS 40:0
40 of 40 96,616,220
MM2 MM2
Metal 2
Metal 2
124
Metal mask2
drawn 69:20
fill 41:28
on mask GDS 41:0
40 of 40 555,342,603
VIM2 VIM2
Via 2-PLM
Via 2 (M2→M3)
variants: Via 2-TNV, Via 2-S8TM, Via 2-PLM
129
Via2 mask
drawn 69:44
on mask GDS 44:0
40 of 40 51,826,231
CAPM CAPM
Capacitor MiM
not used in SKY130
137
Capacitor mask
drawn 89:44 40 of 40 123,722
MM3 MM3
Metal 3-PLM
Metal 3
variants: Metal 3-TLM, Metal 3-S8TM, Metal 3-PLM
139
Metal3 mask
drawn 70:20
fill 34:28
on mask GDS 34:0
40 of 40 232,648,596
VIM3 VIM3
Via3-PLM
Via 3 (M3→M4)
144
Via3 mask
drawn 70:44
on mask GDS 50:0
40 of 40 65,502,925
CAP2M CAP2M
Capacitor mask
152
Capacitor mask
drawn 97:44 40 of 40 121,050
MM4 MM4
Metal 4
Metal 4
154
Metal mask4
drawn 71:20
fill 51:28
on mask GDS 51:0
40 of 40 234,012,550
VIM4 VIM4
Via4
Via 4 (M4→M5)
159
Via pad mask
drawn 71:44
on mask GDS 58:0
40 of 40 11,580,519
MM5 MM5
Metal 5
Metal 5
162
Metal5 mask
drawn 72:20
fill 59:28
on mask GDS 59:0
40 of 40 9,715,923
NSM NSM
Nitride Seal Mask
165
Nitride seal mask
drawn 61:20
on mask GDS 22:0
40 of 40 1,440
PDM PDM
Pad (scribe protect)
PDM = pad OR (cpmm AND areaid.mt) sized by cpdm.4
variants: Pad (scribe protect), Pad (scribe unprotect)
168
Pad mask
drawn 76:20
on mask GDS 37:0
40 of 40 5,409
HVTRM HVTRM
HLow VT PCh Radio*
HVTRM = hvtr
— drawn 18:20
on mask GDS 98:0
0 of 40
unused on this shuttle
0
INDM INDM
Inductor-TLM
INDM = met3 (thick-last-metal flow, not SKY130)
not used in SKY130
— drawn 70:20 40 of 40 36,268,487
NCM NCM
N-Core Implant
drawn ncm in the core plus a created periphery part like HVTPM; only the drawn part is rendered
not used in SKY130
— drawn 92:44
on mask GDS 17:0
derived 92:44 OR ((64:20 NOT 75:20) NOT 125:44)
40 of 40 122,768
RRM RRM
RRAM mask
the RRAM-stack mask (r1c) of the sky130B RRAM tier between met1 and met2. One drawn layer r1c = GDS 201/20 (open_pdks names it RERAM, short alias 'rr' -> 'rr' + M) defines all three physical films: rr1_bot_electrode, rr1_oxide, rr1_top_electrode. Only on the later sets 5CS8016AC/17AC/18AC. sky130A designs draw no 201/20, so those slots render empty
sky130B RRAM tier (met1-met2); drawn layer r1c = GDS 201/20
not used in SKY130
— drawn 201:20 5 of 40 4,270,637
VIMC VIMC
Via 1 top, RRAM tier
the second via1 mask of the sky130B RRAM tier (r1v). The RRAM splits via1 in two: the designer draws one 'via' shape, and mask generation separates it into via_bot (cviam = VIM) and via_top (r1v) wherever the via is enclosed by r1c. Rendered as via AND r1c. NOT CTM1/mcon, as once assumed: 8016/17/18 each carry a separate CTM1 plate (400), and 455 sits above MM1 (450) while mcon is below met1
sky130B RRAM tier; r1v, the upper half of the split via1
not used in SKY130
— drawn 68:44
derived 68:44 AND 201:20
5 of 40 4,270,659
VIPDM VIPDM
Pad Via
VIPDM = via3 (pad-via flow, not SKY130)
not used in SKY130
— drawn 70:44 40 of 40 65,502,925

These are renders of the drawn shapes that go on each photomask, taken from the layouts the shuttle's projects taped out — they are not photomask artwork: reticle pitch, the 4x reduction, mirroring and the frame features the fab adds are not modelled. An empty image is a real result; several mask layers are used by no project on a given shuttle. Each die's source layout is named in result.json and lives in the public shuttle repositories under foss-eda-tools.googlesource.com, so every image here can be traced back to the tape-out it came from. Generated with sky130-mask-decoder.